Seamless joining of silicon carbide ceramics through an sacrificial interlayer of Dy3Si2C2 |
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| Affiliation: | 1. State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xian, Shaanxi, 710049, China;2. Engineering Laboratory of Advanced Energy Materials, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang, 315201, China;3. State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China;1. School of Electromechanical Engineering, Guangdong University of Technology, Guangzhou 510006, China;2. Department of Materials Science and Engineering, University of Sheffield, Sheffield S1 3JD, United Kingdom;3. Nuclear Fuel Research and Development Center, China Nuclear Power Technology Research Institute, Shenzhen 518026, China;1. Engineering Laboratory of Advanced Energy Materials, Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang 315201, China;2. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;1. Engineering Laboratory of Specialty Fibers and Nuclear Energy Materials (FiNE), Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang, 315201, China;2. School of Materials Science and Engineering, Yeungnam University, Gyeongsan, Republic of Korea |
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| Abstract: | A ternary carbide Dy3Si2C2 coating was fabricated on the surface of SiC through a molten salt technique. Using the Dy3Si2C2 coating as the joining interlayer, seamless joining of SiC ceramic was achieved at temperature as low as 1500 °C. Phase diagram calculation indicates that seamless joining was achieved by the formation of liquid phase at the interface between Dy3Si2C2 and SiC, which was squeezed out under pressure and continuously consumed by the joining interlayer. This work implies the great potential of the family of ternary rare-earth metal carbide Re3Si2C2 (Re = Y, La-Nd) as the sacrificial interlayer for high-quality SiC joining. |
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| Keywords: | Joining Silicon carbide Ternary carbide Molten salt |
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