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Performance comparison of zero-Schottky-barrier and doped contacts carbon nanotube transistors with strain applied
Authors:Wahab  Md. Abdul  Alam   Khairul
Affiliation:111.Department of Electrical and Electronic Engineering, United International University, Dhaka, 1209, Bangladesh
;211.Department of Electrical and Electronic Engineering, East West University, Dhaka, 1212, Bangladesh
;
Abstract:Nano-Micro Letters - Atomistic quantum simulation is performed to compare the performance of zero-Schottky-barrier and doped source-drain contacts carbon nanotube field effect transistors (CNTFETs)...
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