Semiconductor Passivation and Insulation Properties for Hydroxyl- and Fluoride-Free ZnO-SiO2-B2O3-Al2O3 Glasses Stabilized by Increased P2O5

F⁻- and OH⁻-free ZnO-B₂O₃-SiO₂-Al₂O₃-P₂O₅ glasses used for semiconductor-device passivation or insulation are investigated with regard to compositional dependencies for thermal expansion, viscosity points, and metal oxide semiconductor (MOS) capacitor properties. The experimental data show that thermal expansion increases, and flow points decrease, when P₂O₅ is substituted for B₂O₃. MOS capacitors passivated by OH⁻- and F⁻-free ZnO-based glasses exhibit normal capacitance-voltage curves.