Submicron-gate InP power MISFET's with improved output powerdensity at 18 and 20 GHz |
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Authors: | Biedenbender MD Kapoor VJ Shalkhauser KA Messick LJ Nguyen R Schmitz D Jurgensen H |
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Affiliation: | Dept. of Electr. & Comput. Eng., Cincinnati Univ., OH; |
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Abstract: | The microwave characteristics at 18 and 20 GHz of submicron-gate indium phosphide (InP) metal-insulator-semiconductor field-effect transistors (MISFETs) for high output power density applications are presented. InP power MISFETs were fabricated with 0.7 μm gate lengths, 0.2 mm gate widths, and drain-source spacings of 2, 3 and 5 μm. The output power density was investigated as a function of drain-source spacing. The best output power density and gain were obtained for drain-source spacings of 3 μm. At 18 GHz output power densities of 1.59 W/mm with a gain of 3.47 dB and a power-added efficiency of 20.0% were obtained for a drain-source spacing of 3 μm. At 20 GHz output power densities of 1.20 W/mm with a gain of 3.17 dB and a power-added efficiency of 13.6% were obtained for a drain-source spacing of 3 μm |
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