Arsenic deactivation enhanced diffusion and the reverseshort-channel effect

The effect of enhanced diffusion caused by the electrical deactivation of arsenic on the reverse short-channel effect (RSCE) in NMOS devices is investigated. A simple four-mask process was utilized to fabricate deep sub-micron NMOS devices. Source/drain (S/D) implant and anneal conditions were varied in order to determine their implications on the RSCE. Results indicate that when high concentrations of arsenic deactivate, enhanced diffusion occurs, leading to significantly more RSCE. This implies that the dose of the arsenic implant and the subsequent anneals should be carefully considered in source/drain engineering