| 高截止频率异质结双极晶体管的研制 |
| |
| 引用本文： | 曾庆明,东熠,李晨,宋东波,张克强.高截止频率异质结双极晶体管的研制[J].微纳电子技术,1991(5). |
| |
| 作者姓名： | 曾庆明 东熠 李晨 宋东波 张克强 |
| |
| 作者单位： | 机电部第13研究所，机电部第13研究所，机电部第13研究所，机电部第13研究所，机电部第13研究所 石家庄，050051，石家庄，050051，石家庄，050051，石家庄，050051，石家庄，050051 |
| |
| 摘 要： | 本文介绍了研制异质结双极晶体管(HBT)的工艺过程。使用MOCVD生长的GaAlAs/GaAs多层结构外延材料,采用离子注入隔离和湿法腐蚀技术,实现基极与发射极台面自对准工艺,研制出截止频率为22GHz的HBT。
|
| 关 键 词： | 双极晶体管 异质结 半导体工艺 |
Development of High Cutoff Frequency HBT |
| |
| Zeng Qingming,Dong Yi,Li Chen,Song Dongbo,Zhang Keqiang The th Institute,Ministry of MEI,Shijiazhuang.Development of High Cutoff Frequency HBT[J].Micronanoelectronic Technology,1991(5). |
| |
| Authors: | Zeng Qingming Dong Yi Li Chen Song Dongbo Zhang Keqiang The th Institute Ministry of MEI Shijiazhuang |
| |
| Affiliation: | Zeng Qingming,Dong Yi,Li Chen,Song Dongbo,Zhang Keqiang The 13th Institute,Ministry of MEI,Shijiazhuang,050051 |
| |
| Abstract: | This paper describes the technological prpcess of heterojunctlon bipolar transistors (HBT). Using GaAlAs/GaAs multilayer epitaxial materials grown by MOCVD, adopting ion implantation isolation and wet etching,and realizing a self-align- ment process of base to emitter mesa, the HBT with high cutoff frequency of 22GHz was developed. |
| |
| Keywords: | Bipolar Transistor Heterojunction Semiconductor technology |
| 本文献已被 CNKI 等数据库收录！ |
|
