A novel transparent pn junction based on indium tin oxides

p-Type indium-doped SnO₂ thin films were successfully fabricated on degenerate n⁺ indium tin oxide glass and quartz glass by sol gel dip-coating method. It was found from the X-ray diffraction results that indium-doped SnO₂ thin films were in the same rutile structure as that of undoped SnO₂. Hall effect measurement results showed that for In/Sn ratio≤0.33 and process temperature approximately 525 °C, the indium-doped tin oxide were p-type. The I–V curve measurement of a prototype transparent pn⁺ junction consisting of a layer of p-type indium-doped SnO₂ and a layer of degenerate n⁺ tin-doped indium oxide showed typical rectifying characteristics.