High performance double-doped InAlAs/InGaAs/InP heterojunction FET with potential for millimetre-wave power applications |
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Authors: | Iwata N. Tomita M. Kuzuhara M. |
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Affiliation: | NEC Corp., Shiga, Japan; |
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Abstract: | Lattice matched InAlAs/InGaAs/InP heterojunction field-effect transistors (HJFETs), which have carrier supplying layers on and beneath the undoped InGaAs channel layer, have been successfully fabricated. A selective recess of the InGaAs channel edge at a mesa sidewall together with the use of a wide recess gate structure leads to a 5.7 V gate-drain breakdown voltage without kink effects. The fabricated HJFET with a 0.15*100 mu m/sup 2/ T-shaped gate exhibits a 700 mA/mm maximum drain current, a voltage gain of 14, and a 345 GHz maximum frequency of oscillation.<> |
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