| 复合量子点MOSFET结构存储器的电路模拟 |
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| 引用本文： | 闾锦,施毅,濮林,杨红官,杨铮,郑有炓.复合量子点MOSFET结构存储器的电路模拟[J].电子学报,2004,32(11):1793-1795. |
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| 作者姓名： | 闾锦 施毅 濮林 杨红官 杨铮 郑有炓 |
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| 作者单位： | 南京大学物理系和固体微结构物理国家重点实验室,江苏南京 210093 |
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| 基金项目： | 国家自然科学基金，江苏省自然科学基金 |
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| 摘 要： | 本文采用准经典近似的Monte Carlo方法对复合量子点MOSFET结构存储器的等效单电子电路进行了模拟.研究结果表明,由于台阶状的复合隧穿势垒的作用,存储器的存储时间特性可得到极大提高.我们进一步研究了N沟道锗/硅复合量子点MOSFET结构存储器的时间特性,得到其存储时间可长达数年,同时写擦时间可分别为μs和ns量级,从而这种新型的器件结构可以有效解决快速编程和长久存储间的矛盾.
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| 关 键 词： | 复合量子点 单电子存储器 电路模拟 |
| 文章编号： | 0372-2112(2004)11-1793-03 |
| 收稿时间： | 2003-09-29 |
Circuit Simulation of MOSFET Memory Based on Composite Quantum Dots |
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| LV Jin,SHI Yi,PU Lin,YANG Hong-guan,YANG Zheng,ZHENG You-dou.Circuit Simulation of MOSFET Memory Based on Composite Quantum Dots[J].Acta Electronica Sinica,2004,32(11):1793-1795. |
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| Authors: | LV Jin SHI Yi PU Lin YANG Hong-guan YANG Zheng ZHENG You-dou |
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| Affiliation: | Department of Physics & National Laboratory of Solid State Microstructures,Nanjing University,Nanjing,Jiangsu 210093,China |
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| Abstract: | The time characteristics of the composite quantum dots based MOSFET memory is simulated with the Monte Carlo method in quasiclassical approximation.It indicates that the retention time could be improved evidently owing to the stepwise compound potential barrier.As an example,the time characteristics of N channel Ge/Si hetero-nanocrystal based MOSFET memory is investigated and the retention time could be as long as several years,at the same time,the writing and erasing time can be in the order of μs and ns,respectively.Hence the conflict between high-speed programming and long retention could be resolved satisfying. |
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| Keywords: | composite quantum dots single-electron memory circuit simulation |
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