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高升压比Boost电路的研究与设计
引用本文:张波,丁玥,郭静媛,赵智轩. 高升压比Boost电路的研究与设计[J]. 通信电源技术, 2021, 0(1): 18-20
作者姓名:张波  丁玥  郭静媛  赵智轩
作者单位:苏州市职业大学电子信息工程学院
基金项目:苏州市职业大学高级访学资助项目;苏州市职业大学研究性课程教改项目(SZDYKC200712);江苏省高校品牌专业建设工程资助项目(PPZY2015A089)。
摘    要:Boost电路广泛应用于用供电电压低于需求直流电的场合下,但传统的Boost电路实际应用中很难实现较高的升压比.采用高频自耦变压器替代传统Boost电路中的电感,利用变压器助力实现Boost电路的高升压比.为尽一步提高效率,减少电路的体积重量,在电压较高的场合用SiC器件替代传统的Si器件.实验结果表明,设计的Boos...

关 键 词:升压比  Boost电路  自耦变压器  SiC器件

Research and Design of Boost Circuit with High Boost Ratio
ZHANG Bo,DING Yue,GUO Jingyuan,ZHAO Zhixuan. Research and Design of Boost Circuit with High Boost Ratio[J]. Telecom Power Technologies, 2021, 0(1): 18-20
Authors:ZHANG Bo  DING Yue  GUO Jingyuan  ZHAO Zhixuan
Affiliation:(Department of Electronic Information Engineering,Suzhou vocational University,Suzhou 215104,China)
Abstract:Boost circuit is widely used when the supply voltage is lower than the demand of DC. But the traditional boost circuit is difficult to achieve higher boost ratio in the practical application. In the traditional boost circuit,the high-frequency autotransformer is used to replace the inductance to realize higher boost ratio. In order to improve the efficiency and reduce the volume and weight of the circuit,SiC devices are used to replace the traditional Si devices in high voltage applications. The experimental results show that the boost ratio of the designed boost circuit can reach more than 30 times,and the efficiency can be increased by more than 1.5% with SiC devices.
Keywords:boost ratio  boost circuit  autotransformer  SiC devices
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