High current conduction with high mobility by non-radiative charge recombination interfaces in organic semiconductor devices |
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Authors: | Woo Sik Jeon Jung Soo Park Ling Li Dae Chul Lim Young Hoon Son Min Chul Suh Jang Hyuk Kwon |
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Affiliation: | Department of Information Display, Kyung Hee University, Dongdaemoon-gu, Seoul 130-701, Republic of Korea |
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Abstract: | We report a unique non-radiative p-n-p junction structure to provide high current conduction with high mobility in organic semiconductor devices. The current conduction was improved by increasing p-n junctions made with intrinsic p-type hole transport layer and n-type electron transport layer. The excellent hole mobility of 5.3 × 10?1 cm2/V s in this p-n-p device configuration is measured by the space charge limited current method with an electric field of 0.3 MV/cm. Enhanced current conduction of 248% at 4.0 V was observed in fluorescent blue organic light-emitting diodes with introduction of non-radiative p-n-p-n-p junction interfaces. Thereupon, the power efficiency at 1000 cd/m2 was improved by 22% and the driving voltage also was reduced by 17%, compared to that of no interface device. Such high current conduction with high mobility is attributed to the carrier recombination at p-n-p interfaces through coulombic interaction. This non-radiative p-n-p junction structure suggested in this report can be very useful for many practical organic semiconductor device applications. |
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