Self-aligned patterning method of poly(aniline) for organic field-effect transistor gate electrode |
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Authors: | Salme Jussila Maria Puustinen Tomi Hassinen Juuso Olkkonen Henrik GO Sandberg Kimmo Solehmainen |
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Affiliation: | 1. VTT Technical Research Centre of Finland, Printed Functional Solutions, P.O. Box 1000, FI 02044 VTT, Finland;2. VTT Technical Research Centre of Finland, Optical Measurement Technologies, P.O. Box 1199, FI 70211 Kuopio, Finland |
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Abstract: | We present a new manufacturing method for the bottom-gate type organic field-effect transistor (OFET) having a self-aligned gate electrode based on conducting poly(aniline). This method utilizes the possibility to turn the insulating emeraldine base (PANI-EB) form of poly(aniline) into the conducting emeraldine salt (PANI-ES) form by using UV exposure and photoacid generator (PAG) material. When the source–drain electrodes are used as the mask layer in the UV exposure step an optimal alignment between the gate electrode and source–drain electrodes can be reached, and the parasitic capacitance of the transistor can be minimized. We anticipate that the proposed concept also simplifies the fabrication of the transistors since no additional processing of the photoresist layers is needed to pattern the gate electrode or the gate insulator layer. |
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