Direct photo-patternable,low-temperature processable polyimide gate insulator for pentacene thin-film transistors |
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Authors: | Kwang-Suk Jang Hye Jung Suk Won Soo Kim Taek Ahn Jae-Won Ka Jinsoo Kim Mi Hye Yi |
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Affiliation: | 1. Division of Advanced Materials, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon 305-600, Republic of Korea;2. Department of Chemistry, Kyungsung University, 314-79 Daeyeon-dong, Nam-gu, Busan 608-736, Republic of Korea |
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Abstract: | We have developed photo-sensitive, low-temperature processable, soluble polyimide (PSPI) gate insulator with excellent resistance to the photo-patterning process. The PSPI was synthesized through one-step condensation polymerization of monomers 5-(2,5-dioxytetrahydrofuryl)-3-methyl-3-cyclohexene-1,2-dicarboxylic anhydride (DOCDA) and 3,5-diaminobenzyl cinnamate (DABC). PSPI thin film, fabricated at 160 °C, has a dielectric constant of 3.3 at 10 kHz, and leakage current density of <1.7 × 10?10 A/cm2, while biased from 0 to 100 V. PSPI could be easily patterned by selective UV-light exposure and dipping into γ-butyrolactone. To investigate the potential of the polyimide as the photo-patternable gate insulator, we fabricated pentacene OTFTs and confirmed the PSPI’s resistance to the photo-patterning process. The photo-patternable polyimide shows promise as gate dielectrics for OTFTs. |
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