Organic field-effect transistors based on low-temperature processable transparent polymer dielectrics with low leakage current |
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Authors: | Jing Zhang Hongfei Zhu Lei Zhang Chong-an Di Wei Xu Wenping Hu Yunqi Liu Daoben Zhu |
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Affiliation: | 1. Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, PR China;2. Graduate University of Chinese Academy of Sciences, Beijing 100039, PR China |
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Abstract: | A solution-based transparent polymer was investigated as the gate dielectric for organic field-effect transistors (OFETs). Organic thin films (400 nm) are readily fabricated by spin-coating a polyhydrazide solution under ambient conditions on the ITO substrates, followed by annealing at a low temperature (120 °C). The smooth transparent dielectrics exhibited excellent insulating properties with very low leakage current densities of ~10?8 A/cm2. High performance OFETs with evaporated pentacene as organic semiconductor function at a low operate voltage (?15 V). The mobility could reach as high as 0.7 cm2/Vs and on/off current ratio up to 104. Solution-processed TIPS-pentacene OFETs also work well with this polymer dielectric. |
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