Tuning electric bistability in pentacene film-based transistor embedding aluminum nanoparticles

Hybrid films of pentacene and aluminum nanoparticles were prepared by depositing pentacene on a SiO₂ surface decorated with aluminum nanoparticles and used as the active channel materials in a thin film transistor. Surface pre-treatment of the aluminum nanoparticles with oxygen plasma and/or organophosphonic acids render the particles surface with different coatings and work functions, which affect the charge trapping/storing ability of the nanoparticles. This in turn results in an electric bistability of the pentacene film-based transistor/memory devices. Correlations of memory window, switching response, and memory retention characteristics with the aluminum nanoparticle surface treatment are provided.