Characterization of solution processed,p-doped films using hole-only devices and organic field-effect transistors |
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Authors: | James S Swensen Liang Wang James E Rainbolt Phillip K Koech Evgueni Polikarpov Daniel J Gaspar Asanga B Padmaperuma |
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Affiliation: | Applied Materials Science Group, Energy and Environment Directorate, Pacific Northwest National Laboratory, 902 Battelle Boulevard, P.O. Box 999, MSIN K3-59, Richland, WA 99352, USA |
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Abstract: | We report a solution processed, p-doped film consisting of the organic materials 4,4′,4″-tris(3-methylphenylphenylamino)triphenylamine (MTDATA) as the electron donor and 2-(3-(adamantan-1-yl)propyl)-3,5,6-trifluorotetracyanoquinodimethane (F3TCNQ-Adl) as the electron acceptor. UV–vis–NIR absorption spectra identified the presence of a charge transfer complex between the donor and acceptor in the doped films. Field-effect transistors were used to characterize charge transport properties of the films, yielding mobility values. Upon doping, mobility increased and then slightly decreased while carrier concentration increased by two orders of magnitude, which in tandem leads to conductivity increasing from 4 × 10?10 S/cm when undoped to 2 × 10?7 S/cm at 30 mol% F3TCNQ-Adl. The hole density was calculated based on mobility values extracted from OFET data and conductivity values extracted from bulk I–V data for the MTDATA: x mol% F3TCNQ-Sdl films. These films were then shown to function as the hole injection/hole transport layer in a phosphorescent blue OLED. |
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