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Complementary-like inverters based on an ambipolar solution-processed molecular bis(naphthalene diimide)-dithienopyrrole derivative |
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| Authors: | Shree Prakash Tiwari Jungbae Kim Keith A Knauer Do Kyung Hwang Lauren E Polander Stephen Barlow Seth R Marder Bernard Kippelen |
| Affiliation: | 1. Center for Organic Photonics and Electronics (COPE), School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA;2. Center for Organic Photonics and Electronics (COPE), School of Chemistry and Biochemistry, Georgia Institute of Technology, Atlanta, GA 30332, USA |
| Abstract: | We report on high-mobility top-gate organic field-effect transistors (OFETs) and complementary-like inverters fabricated with a solution-processed molecular bis(naphthalene diimide)-dithienopyrrole derivative as the channel semiconductor and a CYTOP/Al2O3 bilayer as the gate dielectric. The OFETs showed ambipolar behavior with average electron and hole mobility values of 1.2 and 0.01 cm2 V?1 s?1, respectively. Complementary-like inverters fabricated with two ambipolar OFETs showed hysteresis-free voltage transfer characteristics with negligible variations of switching threshold voltages and yielded very high DC gain values of more than 90 V/V (up to 122 V/V) at a supply voltage of 25 V. |
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