Very low noise RF nMOSFETs on plastic by substrate thinning and wafer transfer |
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Authors: | Kao H.L. Hung B.F. Chin A. Lai J.M. Lee C.F. McAlister S.P. Chi C.C. |
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Affiliation: | Dept. of Electron. Eng., Nano Sci. Technol. Center, Hsinchu, Taiwan; |
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Abstract: | A very low minimum noise figure (NF/sub min/) of 1.2 dB and a high associated gain of 12.8 dB at 10 GHz were measured for six-finger, 0.18-/spl mu/m radio frequency (RF) metal-oxide semiconductor field-effect transistors mounted on insulating plastic following substrate-thinning (/spl sim/30 /spl mu/m) and wafer transfer. Before this process, the devices had a slightly better RF performance of 1.1-dB NF/sub min/ and a 13.7-dB associated gain. The small RF performance degradation of the active transistors transferred to plastic shows the potential of integrating electronics onto plastic. |
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