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浅析集成电路产业现状与对策
引用本文:肖力,赵莹. 浅析集成电路产业现状与对策[J]. 电子与封装, 2008, 8(12): 40-44
作者姓名:肖力  赵莹
作者单位:中国电子科技集团第五十八研究所,江苏,无锡,214035;中国电子科技集团第五十八研究所,江苏,无锡,214035
摘    要:未来全球半导体90nm、65nm和45nm技术进入量产,其芯片尺寸缩小40%、功耗减少30%、速度加快20%。酷睿Ⅱ4核CPU芯片的晶体管已达到8.2亿只。动态存储器将发展到DDR3,其容量已提升至4Gb。NAND Flash和NOR Flash的存储容量已达到16Gb。32nm工艺技术生产的32Gb快闪存储器也成为现实,西欧、中东晶圆厂新增计划6项,投资过60亿美元。东南亚等区域计划投资16项。国内集成电路产量和销售年均增长30%,制造技术进入90nm,12英寸生产已进入批量生产阶段。设计达到0.18μm,少数达到0.13μm技术。08年产值同比增长8.3%,但第三季度增长下降。

关 键 词:集成电路  纳米技术  发展趋势  投资计划  产值增幅

The Analyse About the Future and Countermeasure of IC Industry
XIAO Li,ZHAO Ying. The Analyse About the Future and Countermeasure of IC Industry[J]. Electronics & Packaging, 2008, 8(12): 40-44
Authors:XIAO Li  ZHAO Ying
Affiliation:( China Eletronics Technology Group Corporation No. 58 Research Institute, Wuxi 214035, China )
Abstract:The future global semiconductor technology of 90 nanometer, 65 nanometer and 45 nanometer will be used abundantly, the chip will be shortened 40%, functional consume will be decreased 30%, the speed will be improved 20%.Transisters of Ⅱ cores CPU chip have been 8.2 Billions, dynamic Memory will be DDR3, the capacity have been4 Gb.NOR Flashand NANDFlashmemory capacityhasreached16Gb.it willbecome areality that 32nm process technology for the production of 32Gb flash memory .the wafer factories in Western Europe and the Middle East have increased 6 new plans and the investment has exceeded 60 billons dollars. Areas of Southeast Asia have 16 invest plans. In our country, production of integrated circuits and average annual sales have increased 30%, we have 90 nanometer technology. 12 inch has been produced abundantly. Now designed has achieved 0.18 nm, and a small number have reached the 0.13-micron technology. In 2008 the output have growed more 8.3 percent than last year, but which have descended in the third quarter.
Keywords:integrated circuits   nanotechnology   trends   Investment plans   output growth
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