InGaN／AlGaN双异质结构蓝光LED的电学和光学性质

研究了ＩｎＧａＮ／ＡｌＧａＮ双异质结构（ＤＨ）蓝光发光二极管（ＬＥＤ）的电学和光学性质，实验表明，器件正向偏压下的Ｉ－Ｖ特性偏离了ｐｎ结二极管的肖克莱模型的结果，并且载流子的主要输运机制与载流子隧穿有关。通过对电致发光（ＥＬ）谱的测量，得到位于２．８ｅＶ的发射峰和位于３．２ｅＶ弱发射峰，随着电流增大而均出现蓝移。对大脉冲电流下ＬＥＤ的特性的退化作了研究。

Electrical and optical properties of InGaN/AlGaN double heterostructure blue light emitting diodes

The electrical and optical properties of double heterostructure blue light emitting diodes(LEDs) are studied.The measured result shows that the forward bias current-voltage behavior of the device deviates from Shockley model of p-n junction.It is found that the dominant mechanism of carrier transport across the junction is dependent on carrier tunneling.Electroluminescence experiments of the devices are carried out by which an emission peak at 2.8 eV and a relatively weak short-wavelength peak at 3.2 eV are obtained.These emission peaks have a significant blue-shift as the current increases.It is also observed that the electric properties of the devices degrade under large pulsed current.