| 应变p型Si1—xGex层中补偿浅能级杂质的低温陷阱效应 |
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| 引用本文： | 张万荣,罗晋生.应变p型Si1—xGex层中补偿浅能级杂质的低温陷阱效应[J].微电子学,1998,28(3):208-211. |
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| 作者姓名： | 张万荣 罗晋生 |
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| 作者单位： | [1]北京工业大学电子工程系 [2]西安交通大学微电子研究所 |
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| 基金项目： | 国家教委博士点基金,北京市科技新星计划基金 |
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| 摘 要： | 研究了ｐ型Ｓｉ１－ｘＧｅｘ应变层中补偿浅能级杂质（Ｐ、Ａｓ、Ｓｂ）的低温陷阱效应。研究发现，１）三种补偿浅能杂质Ｐ、Ａｓ、Ｓｂ相比较，Ｓｂ的陷阱效应最小，Ａｓ的最大；２）Ｇｅ组份ｘ越大，低温陷阱效应越小；３）补偿浅能级杂质浓度ＮＤ越大，低温陷阱效应越显著，温度越低，陷阱作用越明显。
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| 关 键 词： | HBT 应变层 陷阱效应 锗化硅 |
Trapping Effects of the Compensated Shallow Level Dopants in Strained p Si 1-x Ge x Layers at Low Temperatures |
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| ZHANG Wan Rong,LUO Jin Sheng #,LI Zhi Guo,MU Fu Chen,GUO Wei Ling,SUN Ying Hua,CHENG Yao Hai and SHEN Guang Di Dept.Electronic Engineering,Beijing Polytechnique University,Beijing #Institute of Microelectronics,Xi.Trapping Effects of the Compensated Shallow Level Dopants in Strained p Si 1-x Ge x Layers at Low Temperatures[J].Microelectronics,1998,28(3):208-211. |
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| Authors: | ZHANG Wan Rong LUO Jin Sheng # LI Zhi Guo MU Fu Chen GUO Wei Ling SUN Ying Hua CHENG Yao Hai and SHEN Guang Di DeptElectronic Engineering Beijing Polytechnique University Beijing #Institute of Microelectronics Xi |
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| Affiliation: | ZHANG Wan Rong,LUO Jin Sheng #,LI Zhi Guo,MU Fu Chen,GUO Wei Ling,SUN Ying Hua,CHENG Yao Hai and SHEN Guang Di Dept.Electronic Engineering,Beijing Polytechnique University,Beijing 100022 #Institute of Microelectronics,Xi |
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| Abstract: | Trapping effects of the compensated shallow level dopants(P,As,Sb)in strained p Si 1-x Ge x layers at low temperatures are studied.It is found that 1) among the three dopants,Sb has the least trapping effects and As has the largest; 2)the larger the Ge fraction x becomes,the less the low temperature trapping effect is;and 3)the larger the concentration of the compensated shallow level dopant is and the lower the temperature becomes,the more significant the trapping effect is. |
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| Keywords: | Semiconductor SiGe device Heterojunction bipolar transistor Strained layer Trapping effect |
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