Computer study of submicrometre f.e.t.s |
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Authors: | Reiser M. Wolf P. |
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Affiliation: | IBM Zurich Research Laboratory, Rüschlikon, Switzerland; |
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Abstract: | The electrical properties of f.e.t.s with submicrometre gates are investigated by means of a 2-dimensional computer model. It is found that the gain-bandwidth product increases with decreasing gate length and reaches a value of 70 GHz for 0.1 ?m gates. This improvement is, however, at the expense of open-circuit voltage gain. A practical limit of the gate length for useful devices is found to be about 0.1 ?m. |
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