Noise contribution of the body resistance in partially-depleted SOIMOSFETs |
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| Authors: | Faccio F Anghinolfi F Heijne EHM Jarron P Cristoloveanu S |
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| Affiliation: | CERN, Geneva; |
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| Abstract: | An additional noise component is observed in the noise spectrum of transistors in a partially-depleted (PD) medium-thickness SOI-CMOS technology. We identify the origin of this additional noise in the noisy resistance of the body film. This resistance, coupled to the gate capacitance, forms an RC filter and generates the hump-shape of the additional noise component. Several experimental observations that support this model are presented |
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