Thermal model for dc characteristics of algan/gan hemts including self-heating effect and non-linear polarization |
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| Authors: | Manju K Chattopadhyay Sanjiv Tokekar |
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| Affiliation: | aSchool of Electronics, Devi Ahilya University, Indore 452001, India;bDepartment of Electronics and Telecommunications, Institute of Engineering and Technology, Devi Ahilya University, Indore 452001, India |
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| Abstract: | A thermal model based on the polynomial relationship of ns and EF is presented. The effect of temperature rise due to self-heating is studied on various parameters viz. polarization, electron mobility, velocity saturation, low-field mobility and thermal conductivity of substrate. Parasitic resistances and channel length modulation were also taken into consideration. The relationship between self-heating effect and device parameters was studied. The model is based on closed-form expressions and does not require elaborate computation. After including self-heating effect in calculations of current–voltage characteristics, our results agreed well with published experimental data. |
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| Keywords: | AlmGa1− mN/GaN HEMT Non-linear polarization 2-DEG Self-heating Power dissipation Analytical thermal model |
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