V_2O_5掺杂对低温烧结宽温NiCuZn铁氧体显微结构及性能的影响

采用氧化物陶瓷工艺制备低温共烧铁氧体(LTCF)多层片式器件用NiCuZn铁氧体材料,研究了V_2O_5掺杂对材料微观结构、磁导率及其温度特性的影响。结果表明,随V_2O_5掺杂量的增加,样品平均晶粒尺寸增大,材料烧结温度降低,磁导率先增大后降低;宽温NiCuZn铁氧体配方采用0.4wt%的V_2O_5掺杂,可使材料实现低温烧成(烧结温度900℃左右),并具有高磁导率(500左右)、致密的细晶粒显微结构,从而获得满足LTCF多层片式铁氧体器件高、低温应用环境(-55~+85℃)下磁性能要求的低温烧结NiCuZn铁氧体宽温材料。

Effect of V2O5 doping on the microstructure and properties of low temperature sintered NiCuZn ferrite

NiCuZn ferrite materials for low temperature co-fired ferrite (LTCF) multilayer chip devices were prepared using oxide ceramic techniques.The influences of V2O5 doping on the material microstructure,permeability and its temperature characteristics were studied.Results show that with the increase of V2O5 amount,the average grain size increases,the sintering temperature reduces,and the permeability firstly increases and then reduces.For V2O5 doping amount of 0.4wt％,materials were obtained with low-temperature sintering (900 ℃ or so),high permeability (about 500) and contact fine grain microstrueture,which meets the magnetic performance demand in high and low temperature(-55 to + 85 ℃) application of LTCF multilayer chip ferrite devices.