| 半导体少子产生区宽度线性模型的研究 |
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| 引用本文： | 丁扣宝,吴滔.半导体少子产生区宽度线性模型的研究[J].微电子学,2004,34(3):289-290. |
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| 作者姓名： | 丁扣宝 吴滔 |
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| 作者单位： | 浙江大学,信息与电子工程学系,微电子研究所,浙江,杭州,310027 |
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| 摘 要： | 基于对半导体表面产生区宽度特点的分析，提出了与表面空间电荷区宽度呈线性关系的产生区宽度新模型。该模型形式简单，精度较高。数理统计分析结果表明，该线性模型是合理的。
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| 关 键 词： | 半导体 少数载流子 产生区宽度 线性模型 |
| 文章编号： | 1004-3365(2004)03-0289-02 |
A Study on the Linear Model of Minority Carrier Generation Width in Semiconductors |
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| DING Kou-bao,WU Tao.A Study on the Linear Model of Minority Carrier Generation Width in Semiconductors[J].Microelectronics,2004,34(3):289-290. |
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| Authors: | DING Kou-bao WU Tao |
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| Abstract: | Based on the analysis of the model of generation width in semiconductor surface, a new model of generation width is presented, which is a linear function of the equilibrium surface space charge region width. This model is highly accurate, although it is simple in form. The results obtained by mathematical statistics show that the linear model is reasonable. |
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| Keywords: | Semiconductor Minority carrier Generation width Linear model |
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