| AlGaN/GaN高电子迁移率晶体管小信号等效电路的参数提取 |
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| 引用本文： | 常远程, 张义门, 张玉明, 王超, 曹全君,.AlGaN/GaN高电子迁移率晶体管小信号等效电路的参数提取[J].电子器件,2007,30(1):49-53. |
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| 作者姓名： | 常远程 张义门 张玉明 王超 曹全君 |
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| 作者单位： | 西安电子科技大学微电子所教育部宽禁带半导体材料与器件重点实验室,西安,710071 |
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| 摘 要： | 本文在高电子迁移率晶体管(HEMT)小信号等效电路模型的基础上,考虑了AlGaN/GaN HEMT的结构特性,具体分析了寄生参数和本征参数的提取方法.采用这些方法,实际测量了5～10 GHz频率下HEMT器件的小信号S参数并提取了它的电学参数,S参数的计算值与实际测量值进行了比较.实验结果表明此方法简单易行,较为精确.
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| 关 键 词： | AlGaN/GaN HEMTs 小信号 参数提取 AlGaN/GaN HEMTs small signal parameter extraction |
| 文章编号： | 1005-9490（2007）01-0049-05 |
| 修稿时间： | 2006-02-28 |
Parameter Extraction for Small Signal Equivalent Circuit of AlGaN/GaN High Electron Mobility Transistors |
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| CHANG Yuan-cheng,ZHANG Yi-men,ZHANG Yu-ming,WANG Chao,CAO Quan-jun.Parameter Extraction for Small Signal Equivalent Circuit of AlGaN/GaN High Electron Mobility Transistors[J].Journal of Electron Devices,2007,30(1):49-53. |
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| Authors: | CHANG Yuan-cheng ZHANG Yi-men ZHANG Yu-ming WANG Chao CAO Quan-jun |
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| Affiliation: | Key Lab of Ministry of Eduoation for Wide Band-Cap Semiconductor Materials and Devices Microelectronics Institute, Xidian University , Xian 710071,China |
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| Abstract: | Considering the peculiarities of AlGaN/GaN high electron mobility transistors (HEMTs), a model of extracting parasitic and intrinsic parameters for HEMT's small signal equivalent circuit is presented. The electrical parameters and S-parameters at 5～10 GHz for the AlGaN/GaN HEMT device have been extracted with this model. The calculated S-parameters match the measured data well. It is indicated that this model is simple and feasible. |
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| Keywords: | AlGaN/GaN HEMTs small signal parameter extraction |
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