| 国外军事和宇航应用宽带隙半导体技术的发展 |
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| 引用本文： | 赵小宁,李秀清.国外军事和宇航应用宽带隙半导体技术的发展[J].半导体技术,2009,34(7). |
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| 作者姓名： | 赵小宁 李秀清 |
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| 作者单位： | 中国电子科技集团公司,第十三研究所,石家庄,050051;中国电子科技集团公司,第十三研究所,石家庄,050051 |
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| 摘 要： | SiC和GaN等宽带隙半导体以其固有的高频、大功率、高温和抗恶劣环境应用潜力,在替代传统的Si和GaAs等器件应用于军事及宇航系统装备方面具有无可比拟的技术优势.概述了以SiC、GaN和金刚石等为代表的第三代半导体器件技术的发展现状,介绍了国外发达国家在发展宽带隙半导体技术上值得借鉴的一些做法,着重讨论宽带隙半导体技术对宇航及军事装备产生的重要影响,并展望了宽带隙半导体技术在宇航及军事应用中的发展前景.
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| 关 键 词： | 宽带隙半导体 宇航应用 微电子器件 碳化硅 金刚石 氮化镓 恶劣环境 |
Overview of the Development of Wide Band-Gap Semiconductor Technologies for Military and Aeronautical Applications in Advanced Countries |
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| Zhao Xiaoning,Li Xiuqing.Overview of the Development of Wide Band-Gap Semiconductor Technologies for Military and Aeronautical Applications in Advanced Countries[J].Semiconductor Technology,2009,34(7). |
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| Authors: | Zhao Xiaoning Li Xiuqing |
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| Affiliation: | Zhao Xiaoning,Li Xiuqing(The 13th Research Institute,CETC,Shijiazhuang 050051,China) |
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| Abstract: | Due to its high frequency,high power,high temperature and harsh-environment resistant capabilities,wide band-gap semiconductor such as SiC and GaN are technologically suitable for replacing conventional Si and GaAs devices in military and aeronautic applications.The current development of the third generation semiconductors namely wide band-gap semiconductors are summarized,typified by SiC,GaN and diamond.Some prudent technology projects adopted by other countries in the course of wide-gap semiconductor res... |
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| Keywords: | wide band-gap semiconductors aeronautic applications microelectronic devices SiC diamond GaN harsh-environment |
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