| InAs薄膜Hall器件 |
| |
| 引用本文： | 周宏伟 曾一平. InAs薄膜Hall器件[J]. 传感器与微系统, 1998, 17(5): 19-21 |
| |
| 作者姓名： | 周宏伟 曾一平 |
| |
| 作者单位： | 中国科学院半导体所 |
| |
| 摘 要： | 利用分子束外延（ＭＢＥ）生长的高迁移率ＩｎＡｓ外延层成功制备了的薄膜Ｈａｌ器件。这种Ｈａｌ器件具有灵敏度高、温度特性好等优点。室温下的积灵敏度和电压相关的灵敏度分别为１１ｍＶ／ｍＡ·ｋＧｓ和４０ｍＶ／Ｖ·ｋＧｓ（灵敏度比相同掺杂的ＧａＡｓＨａｌ器件高５０％）。在（２０～７０）℃温度区域内，内阻温度系数和Ｈａｌ电压温度系数分别为８×１０－４／℃，－２×１０－３／℃（恒流驱动）和－３×１０－３／℃（恒压驱动）。
|
| 关 键 词： | 霍尔器件 积灵敏度 电压相关 电阻温度系数 |
InAs Thin Film Hall Elements |
| |
| Zhou Hongwei Zeng Yiping Li Qiwang Wei Wei Wang Hongmei Kong Meiying. InAs Thin Film Hall Elements[J]. Transducer and Microsystem Technology, 1998, 17(5): 19-21 |
| |
| Authors: | Zhou Hongwei Zeng Yiping Li Qiwang Wei Wei Wang Hongmei Kong Meiying |
| |
| Abstract: | High-performance InAs thin film Hall elements(sensors)with high sensitivity low temperature coefficients are developed.The product sensitivity and voltage-related sensitivity of this Hall elements are as large as 11 mV/mA ·kGs and 40 mV/V ·kGs respectively.These values are 50% larger than the standard GaAs Hall elements at the same driving condition.The resistance temperature coefficient and Hall voltage coefficient are 8×10 -4 /℃,-2×10 -3 /℃(current-drive) and -3×10 -3 /℃(voltage-drive)respectively. |
| |
| Keywords: | Hall elements Product sensitivity Voltage-related Resistance temperature coefficient |
| 本文献已被 CNKI 维普 等数据库收录！ |
