| 迅速发展的LCVD技术 |
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| 引用本文： | 王庆亚,张玉书.迅速发展的LCVD技术[J].激光技术,1994,18(3):161-168. |
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| 作者姓名： | 王庆亚 张玉书 |
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| 作者单位： | 1.吉林大学电子工程系集成光电子学国家重点联合实验室吉林大学实验区, 长春, 130023 |
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| 摘 要： | 超低阈值电流的InGaAs激光二极管记录的低阈值电流—在原解理面InGaAs/AlGaAs激光器中为1mA,在镀高反射膜InGaAs/AlGaAs激光器中脉冲电流为0.25mA—在单量子阱结构中已经获得。
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| 关 键 词： | LCVD 金属膜 电介质膜 半导体膜 光化学反应 |
| 收稿时间： | 1993-02-24 |
| 修稿时间： | 1993-10-20 |
Rapid developing LCVD technology |
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| Wang Qingya,Zhang Yushu.Rapid developing LCVD technology[J].Laser Technology,1994,18(3):161-168. |
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| Authors: | Wang Qingya Zhang Yushu |
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| Abstract: | In This paper,the development process and the application of LCVD technology in growing the metal film,dielectric film and semiconductor film in during the past ten years are reviewed.With this technology,not only the conventional de-vices can get the excellent electronic features because of low growth temperature,but also the new structure materials and new devices can be manufactured for using the high accurate thickness control.The wide application prospect of LCVD technology is described here. |
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| Keywords: | LCVD metalic film dielect film semiconductor film photo-chemi-cal decomposition |
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