| InP/InGaAs PIN红外探测器增透膜的研究 |
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| 引用本文： | 杨集,冯士维,王承栋,张跃宗,李瑛,孙静莹. InP/InGaAs PIN红外探测器增透膜的研究[J]. 半导体技术, 2006, 31(8): 594-597 |
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| 作者姓名： | 杨集 冯士维 王承栋 张跃宗 李瑛 孙静莹 |
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| 作者单位： | 北京工业大学,电子信息与控制工程学院,北京,100022 |
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| 摘 要： | 简单介绍了单层增透膜的基本工作原理,并理论计算了增透膜为SiO2和Si3N4时InP/InGaAs PIN探测器的透射率.计算结果表明Si3N4的增透效果要优于SiO2,通过测试淀积有Si3N4增透膜的探测器的响应度,并和理论计算的透射率进行比较,研究了不同的淀积工艺对响应度的影响和探测器在不同应用时膜厚的设计方法.
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| 关 键 词： | 探测器 增透膜 淀积 InGaAs 红外探测器 增透膜 研究 Antireflection Coating Investigation 设计方法 膜厚 应用 影响 淀积工艺 比较 响应度 测试 效果 结果 理论计算 透射率 工作原理 |
| 文章编号： | 1003-353X（2006）08-0594-04 |
| 收稿时间： | 2006-03-07 |
| 修稿时间： | 2006-03-07 |
Investigation of Antireflection Coating for InGaAs/InP PIN Photodetectors |
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| YANG Ji,FENG Shi-wei,WANG Cheng-dong,ZHANG Yue-zong,LI Ying,SUN Jing-ying. Investigation of Antireflection Coating for InGaAs/InP PIN Photodetectors[J]. Semiconductor Technology, 2006, 31(8): 594-597 |
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| Authors: | YANG Ji FENG Shi-wei WANG Cheng-dong ZHANG Yue-zong LI Ying SUN Jing-ying |
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| Abstract: | The principle of transparency - increased theory of single antireflection (AR) coating was introduced. The transmittance of InP/InGaAs PIN infrared photodetectors which deposited with SiO2 and Si3N4 respectively as the AR coating was calculated. The results show that Si3N4 is better than SiO2 as AR coating. The responsibility for the photodetector which deposited with Si3N4 AR coating was measured, combining the simulating results of transmittance, the depositing technique and de- sign method for thickness were investigated. |
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| Keywords: | detector antireflection (AR) coating deposition |
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