Degradation due to electrical stress of poly-Si thin filmtransistors with various LDD lengths |
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| Authors: | Yong-Sang Kim Min-Koo Han |
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| Affiliation: | Dept. of Electr. Eng., Myongji Univ., Kyongki; |
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| Abstract: | The degradation phenomena of polycrystalline silicon (poly-Si) thin film transistors (TFT's) with various lightly-doped drain (LDD) length have been investigated. It is observed that the threshold voltage shift due to electrical stress varies with LDD length. The threshold voltage shift after 4 hours electrical stress of Vg=Vd =30 V in conventional, 0.5 μm, and 2 μm LDD poly-Si TFT's are about 2.7 V, 5.2 V, and 0.8 V, respectively |
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