p-type thin-film transistors with vacuum-deposited crystallized copper-doped germanium films

Copper-doped 10-nm-thick vacuum-deposited Ge films between vitreous aluminosilicate insulator films can be crystallized at 400°C, with hole mobilities of 80 cm²/V.s. They yield stable p-type TFT's with 10⁵on/off ratio which are process-compatible with n-type CdSe TFT's and thus usable for complementary on-board shift registers in active matrix displays.