Effect of gate poly-silicon depletion on MOSFET input impedance

One of the most challenging problems encountered in developing RF circuits is accurate prediction of MOS behavior at microwave signal and data frequencies. An attempt is made in this work to accurately model the device input impedance for the 1-20-GHz frequency range. The effect of device length and single-leg width on the input impedance is studied with the aid of extensive measured data obtained from devices built in 0.11-/spl mu/m and 0.18-/spl mu/m technologies. The measured data illustrates that the device input impedance has a nonlinear frequency dependency. It is also shown that this variation in input impedance is a result of gate poly-silicon depletion, which can be modeled by an external RC network connected at the gate of the device. Excellent agreement between the simulation results and the measured data validates the model in the device active region.