Hall effect and magnetoresistance in extrinsic piezoelectric semiconductors |
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| Authors: | Chhi-Chong Wu Jensan Tsai |
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| Affiliation: | (1) Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan;(2) Institute of Nuclear Science, National Tsing Hua University, Hsinchu, Taiwan |
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| Abstract: | The Hall effect and transverse magnetoresistance in extrinsic piezoelectric semiconductors such as InSb are investigated according to the scattering processes of carriers in semiconductors. These scattering processes contain the acoustic phonon scattering, the piezoelectric scattering, and the ionized-impurity scattering. The energy band structure of carriers in semiconductors is assumed to be nonparabolic. Results show that Hall angle, Hall coefficient, and transverse magnetoresistance depend strongly on the dc magnetic field and carrier density due to the energy-dependent relaxation time. Comparison with experimental data is made. It is also found that the magnetoresistance in degenerate InSb oscillates with the dc magnetic field due to the scattering of carriers with impurities in semiconductors. |
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