Reduced surface sidewall recombination and diffusion in quantum-dot lasers |
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| Authors: | S.A. Moore L. O'Faolain M.A. Cataluna M.B. Flynn M.V. Kotlyar T.F. Krauss |
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| Affiliation: | Sch. of Phys. & Astron., Univ. of St. Andrews, UK; |
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| Abstract: | We examine the surface recombination rate in quantum-dot semiconductor lasers and determine the diffusion length (1.0 /spl mu/m) and, for the first time, provide a value for surface recombination velocity (5/spl times/10/sup 4/ cm/s) in quantum-dot material. As a result of strong carrier confinement in the dots, these values are much lower than in comparable quantum-well lasers (5/spl times/10/sup 5/ cm/s and 5 /spl mu/m, respectively) allowing the creation of narrow (2-3 /spl mu/m wide) lasers with comparable threshold currents to those of broad area devices. |
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