Impact of geometrical scaling on low-frequency noise in SiGe HBTs |
| |
| Authors: | Zhenrong Jin Cressler J.D. Guofu Niu Joseph A.J. |
| |
| Affiliation: | Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA; |
| |
| Abstract: | The influence of geometrical scaling on low-frequency noise in SiGe HBTs is presented. Small-size transistors show a strong variation in noise across many samples, whereas the noise in larger devices is more statistically reproducible. This size-dependent variation in noise can produce challenges for accurate compact modeling. This effect is investigated using reverse-bias emitter-base stress and calculations based on the superposition of generation/recombination noise. |
| |
| Keywords: | |
|
|
