Strain and defect engineering of graphene for hydrogen storage via atomistic modelling

The adsorption of hydrogen molecules on monolayer graphene is investigated using molecular dynamics simulations (MDS). Interatomic interactions of the graphene layer are described using the well-known AIREBO potential, while the interactions between graphene and hydrogen molecule are described using Lennard-Jones potential. In particular, the effect of strain and different point defects on the hydrogen storage capability of graphene is studied. The strained graphene layer is found to be more active for hydrogen and show 6.28 wt% of H₂ storage at 0.1 strain at 77 K temperature and 10 bar pressure. We also studied the effect of temperature and pressure on the adsorption energy and gravimetric density of H₂ on graphene. We considered different point defects in the graphene layer like monovacancy (MV), Stone Wales (SW), 5-8-5 double vacancy (DV), 555–777 DV, and 5555-6-7777 DV which usually occur during the synthesis of graphene. At 100 bar pressure, graphene with 1% concentration of MV defects leads to 9.3 wt% and 2.208 wt% of H₂ storage at 77 K and 300 K, respectively, which is about 42% higher than the adsorption capacity of pristine graphene. Impact of defects on the critical stress and strain of defected graphene layers is also studied.