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FIB micro-milled sapphire for GaN maskless epitaxial lateral overgrowth: a systematic study on patterning geometry |
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| Authors: | Jelmakas E Kadys A Dmukauskas M Grinys T Tomašiūnas R Dobrovolskas D Gervinskas G Juodkazis S Talaikis M Niaura G |
| Affiliation: | 1.Institute of Photonics and Nanotechnology, Vilnius University, Saul?tekio 3, 10257, Vilnius, Lithuania ;2.Centre for Micro-Photonics, Faculty of Science, Engineering and Technology, Swinburne University of Technology, Hawthorn, VIC, 3122, Australia ;3.Institute of Biochemistry, Vilnius University, Saul?tekio 7, 10257, Vilnius, Lithuania ;4.Department of Organic Chemistry, Center for Physical Sciences and Technology, Saul?tekio 3, 10257, Vilnius, Lithuania ; |
| Abstract: | Journal of Materials Science: Materials in Electronics - A systematic study of the GaN epitaxial lateral overgrowth (ELO) of the focused ion beam (FIB) patterned sapphire substrate is presented.... |
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