Ge-doped ZnO nanorods grown on FTO for photoelectrochemical water splitting with exceptional photoconversion efficiency

In this study, a considerable effort has been devoted for the synthesis of Ge-doped ZnO nanorods on FTO as an efficient and robust photoanode material for solar water splitting. A unique, optimized, and ultra-rapid fabrication method to produce uniform nanorods (30–70 nm in diameter) has been demonstrated using radio frequency sputtering followed by electrochemical anodization. The effect of Ge doping on the conductivity, charge carrier concentration, optical, and photoelectrochemical properties of ZnO was investigated using scanning electron microscope (SEM), glancing angle X-ray diffraction (GAXRD), UV–Vis spectrometer, and Mott Schottky analysis. Glancing angle XRD confirmed the presence of wurtzite structure with a preferable orientation around (101) plane, which is of particular interest for many applications. As evidenced by the photoelectrochemical and transient photocurrent measurements, the fabricated Ge-doped ZnO nanorods exhibited enhanced photocurrent (12 mA/cm²) with an exceptional open circuit voltage of ?1.07 V_SCE (?0.416 V_RHE) under AM1.5G illumination, compared to the undoped ZnO based-photoanodes. Moreover, the Ge-doped ZnO nanorods showed unprecedented photoconversion efficiency of 3.6% under AM1.5G illumination. Therefore, the fabricated Ge-doped ZnO nanorods could be a promising conductive photoanode for water splitting.