| 铜铟镓硒柔性薄膜太阳电池的制备及性能表征 |
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| 引用本文： | 方小红,赵彦民,杨立,冯金晖,李巍.铜铟镓硒柔性薄膜太阳电池的制备及性能表征[J].电源技术,2009,33(5). |
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| 作者姓名： | 方小红 赵彦民 杨立 冯金晖 李巍 |
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| 作者单位： | 中国电子科技集团公司第十八研究所化学与物理电源技术重点实验室,天津,300381 |
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| 基金项目： | 天津市科技支撑计划重点项目(07ZCKFGX02700) |
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| 摘 要： | 以厚度为25～70mm的钛箔为衬底,直流磁控溅射法制备0.8～1.2mm的底电极Mo薄膜,而后以CuIn和CuGa靶交替溅射制得Cu-In-Ga金属预制膜,再以真空硒化法制得CuIn1-xGaxSe2薄膜。以化学浴沉积法制备缓冲层CdS,射频磁控溅射法制备ZnO和ZAO,直流磁控溅射法制备上电极,制得结构为衬底Ti/Mo/CIGS/CdS/ZnO/ZAO/Al,其光电转换效率达到7.3%(25℃,AM0)。
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| 关 键 词： | 铜铟镓硒 薄膜 太阳电池 柔性 |
Preparation and property of CuIn1-x-xGaxSe2 thin film solar cells on flexible substrates |
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| FANG Xiao-hong,ZHAO Yan-min,YANG Li,FENG Jin-hui,LI Wei.Preparation and property of CuIn1-x-xGaxSe2 thin film solar cells on flexible substrates[J].Chinese Journal of Power Sources,2009,33(5). |
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| Authors: | FANG Xiao-hong ZHAO Yan-min YANG Li FENG Jin-hui LI Wei |
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| Affiliation: | National Key Lab of Power Sources;Tianjin Institute of Power Sources;Tianjin 300381;China |
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| Abstract: | CuIn1-xGaxSe2 thin film solar cells were preparatived on 27~70 mm thick Ti foils flexible substrates. A 0.8~1.2 mm molybdenum (Mo) layer was deposited by DC magnetron sputtering, which served as the back contact. The CIGS absorbing layers were grown by the two-step method. Cu-In-Ga metallic precursors were deposited using Cu-Ga and Cu-In alloy targets by DC magnetron sputtering. The metallic precursor films were selenized in vacuum evaporation system. Intrinsic-ZnO and Al-doped ZnO were deposited by ratio-f... |
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| Keywords: | CuIn1-x GaxSe2 solar cell thin film flexible |
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