Electrical properties of silicon layers implanted with erbium and oxygen ions in a wide dose range and thermally treated in different temperature conditions

The electrical properties of silicon implanted with Er and O ions in a wide dose range have been studied. The dependence of electron mobility on the concentration of electrically active centers is determined for Si:Er layers with Er concentrations in the range of 9×10¹⁵–8×10¹⁶ cm^?3. Sharp bends related to specific features of Er segregation in solid-phase epitaxial recrystallization are observed in the concentration profiles of electrically active centers, n(x), and Er atoms, C(x), at Er ion implantation doses exceeding the amorphization threshold. The n(x) and C(x) profiles virtually coincide near the surface. A linear rise in the maximum concentration of electrically active centers at approximately constant effective coefficient of their activation, k, is observed at Er implantation doses exceeding the amorphization threshold. At an Er concentration higher than 7×10¹⁹ cm^?3, the concentration of electrically active centers levels off and k decreases.