Suppression of boron penetration in p-channel MOSFETs usingpolycrystalline Si1-x-yGexCy gatelayers |
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Authors: | Stewart EJ Carroll MS Sturm JC |
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Affiliation: | Dept. of Electr. Eng., Princeton Univ., NJ; |
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Abstract: | Boron penetration through thin gate oxides in p-channel MOSFETs with heavily boron-doped gates causes undesirable positive threshold voltage shifts. P-channel MOSFETs with polycrystalline Si1-x-yGexCy gate layers at the gate-oxide interface show substantially reduced boron penetration and increased threshold voltage stability compared to devices with all poly Si gates or with poly Si1-xGe gate layers. Boron accumulates in the poly Si1-x-yGexCy layers in the gate, with less boron entering the gate oxide and substrate. The boron in the poly Si1-x-yGexCy appears to be electrically active, providing similar device performance compared to the poly Si or poly Si1-xGex gated devices |
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