Very low threshold InGaAsP mesa laser |
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| Authors: | Chen T. Chiu L. Yu K. Koren U. Hasson A. Margalit S. Yariv A. |
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| Affiliation: | California Inst. of Technology, CA, USA; |
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| Abstract: | Very low threshold currents InGaAsP/InP terrace mesa (T-ME) lasers with an unpassivated surface have been fabricated on semi-insulating (SI) InP substrates. Fabrication of the lasers involves a single-step liquid phase epitaxial (LPE) growth and a simple etching process. Lasers operating in the fundamental transverse mode with threshold currents as low as 6.3 mA (for a cavity length of 250 μm) have been obtained. Comparison between the unpassivated lasers and those passivated using the mass transport technique is described. |
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