| PIN二极管的研究进展 |
| |
| 引用本文： | 江利,王建华,黄庆安,秦 明. PIN二极管的研究进展[J]. 电子器件, 2004, 27(2): 372-376 |
| |
| 作者姓名： | 江利 王建华 黄庆安 秦 明 |
| |
| 作者单位： | 合肥工业大学理学院,合肥,230009;东南大学MEMS教育部重点实验室,南京,210096 |
| |
| 摘 要： | 制备PIN二极管的几种方法：扩散法、离子注入法、外延法和键合法。用各种方法制备PIN二极管的工艺过程。分析了各种方法的优缺点，着重比较了键合与外延方法制备PIN二极管。结果表明键合工艺制备PIN二极管不仅制造成本低，工艺简单，而且界面缺陷少，反向击穿电压高。所以用键合工艺制备PIN二极管可能成为未来主流制造技术。
|
| 关 键 词： | PIN二极管 离子注入 扩散 外延 键合 |
| 文章编号： | 1005-9490(2004)02-0372-05 |
Progress on the Fabrication of PIN Diodes |
| |
| JIANG Li,WANG Jian-hua,HUANG Qing-an,QING Ming .School of Science,Hefei University of Technology,Hefei ,China, .Key laboratory of MEMS of Education Ministry,Southeast University,Nanjing ,China. Progress on the Fabrication of PIN Diodes[J]. Journal of Electron Devices, 2004, 27(2): 372-376 |
| |
| Authors: | JIANG Li WANG Jian-hua HUANG Qing-an QING Ming .School of Science Hefei University of Technology Hefei China .Key laboratory of MEMS of Education Ministry Southeast University Nanjing China |
| |
| Affiliation: | JIANG Li~1,WANG Jian-hua~1,HUANG Qing-an~2,QING Ming~2 1.School of Science,Hefei University of Technology,Hefei 230009,China, 2.Key laboratory of MEMS of Education Ministry,Southeast University,Nanjing 210096,China |
| |
| Abstract: | The methodes are introduced on fabricating the PIN diodes:diffusion,ion implantation,epitaxy and bonding.The technology of fabricating the PIN diodes with various methodes is introduced. The advantages and disadvantages of these methods are analyzed.Emphasis are given on comparing epitaxy with bonding technology in producting the PIN diodes.The results show that bonding PIN diodes are not only low fabrication cost,simple technology,but also few defects and high breakdown voltages.So producting the PIN diodes with bonding technology is possible to become main fabrication technology. |
| |
| Keywords: | PIN diode ion implantation diffusion epitaxy bonding |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
| 点击此处可从《电子器件》浏览原始摘要信息 |
|
点击此处可从《电子器件》下载免费的PDF全文 |
|
