Very-low-threshold 2.4-/spl mu/m GaInAsSb-AlGaAsSb laser diodes operating at room temperature in the continuous-wave regime |
| |
| Authors: | A. Salhi Y. Rouillard J. Angellier M. Garcia |
| |
| Affiliation: | CEM2, Univ. Montpellier II, France; |
| |
| Abstract: | A GaInAsSb-AlGaAsSb large optical cavity triple-quantum-well structure was grown by molecular-beam epitaxy. Shallow mesa ridge-waveguide lasers with stripe width of 100 /spl mu/m were fabricated and tested. An internal losses coefficient as low as 4 cm/sup -1/ and a high internal quantum efficiency of 70% were obtained. In the pulsed regime at room temperature, the extrapolated threshold current densities for infinite cavity length is 78 A/cm/sup 2/. The threshold current density per quantum well is as low as 34 A/cm/sup 2/ for a 3-mm-long cavity. |
| |
| Keywords: | |
|
