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TiN薄膜表面形貌的分形表征及其演化特征
引用本文:赵海阔,雒向东. TiN薄膜表面形貌的分形表征及其演化特征[J]. 半导体技术, 2008, 33(8)
作者姓名:赵海阔  雒向东
作者单位:兰州城市学院,培黎工程技术学院,兰州,730070;兰州城市学院,培黎工程技术学院,兰州,730070
摘    要:用反应磁控溅射方法在Si基片上沉积TiN膜,用原子力显微镜(ARM)观察薄膜表面形貌.比较研究了尺码法、盒计数法、功率谱密度法与高度-高度相关函数法计算的表面形貌分形维数Df结果,并研究了TiN膜表面形貌的演化特征.结果表明,功率谱密度法与高度-高度相关函数法计算的Df值与AFM观测尺度不相关,具有较好的稳定性,随着膜厚h增加,薄膜分形维数Df先减小再增加,这是由生长初期基片表面影响与生长后期的晶粒长大所导致的.

关 键 词:氮化钛膜  表面形貌  分形  反应溅射

Surface Morphology Evolution of TiN Thin Films Characterized by Fractal Methods
Zhao Haikuo,Luo Xiangdong. Surface Morphology Evolution of TiN Thin Films Characterized by Fractal Methods[J]. Semiconductor Technology, 2008, 33(8)
Authors:Zhao Haikuo  Luo Xiangdong
Affiliation:Zhao Haikuo,Luo Xiangdong ( Peili Technical College,Lanzhou City University,Lanzhou 730070,China)
Abstract:TiN thin films were deposited on Si substrates by reactive magnetron sputtering technology. Film surface morphologies were obtained using atomic force microscope (AFM). Fractal dimension Df of the films were calculated by scale, box-counting, power spectrum density, and height-height correlation function methods, respectively. The results show that the accurate values of Df can be obtained by the later two methods. With increasing film thickness, Df first decreases and then increases,this arises from the ef...
Keywords:TiN film  surface morphology  fractal  reactive sputtering  
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