Electric-field-induced refractive index variation in quantum-well structure |
| |
| Authors: | Yamamoto H. Asada M. Suematsu Y. |
| |
| Affiliation: | Tokyo Institute of Technology, Department of Physical Electronics, Tokyo, Japan; |
| |
| Abstract: | The refractive index variation in a quantum-well structure by an electric field is given theoretically. The calculated variation is ?1% for an applied field of 3.1×105 V/cm in a 300 ?-thick GaInAsP/InP single quantum well, which is about 39 times larger than the bulk value. A semiconductor quantum-well structure is found theoretically to be a new material with a larger electro-optic coefficient. Application to a new optical switching device is also suggested. |
| |
| Keywords: | |
|
|
