Controllable growth of single-layer graphene on a Pd(1 1 1) substrate |
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Authors: | Jian-Hua Gao Nobuyuki Ishida Isaacson Scott Daisuke Fujita |
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Affiliation: | 1. International Center for Young Scientists, National Institute for Materials Science, 1-2-1 Sengen Tsukuba, Ibaraki 305-0047, Japan;2. Nano Characterization Unit, National Institute for Materials Science, 1-2-1 Sengen Tsukuba, Ibaraki 305-0047, Japan;3. Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455, USA |
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Abstract: | Using a surface segregation technique, single-layer graphene can be grown on a carbon-doped Pd(1 1 1) substrate. The growth was monitored and visualized using Auger electron spectroscopy, X-ray photoelectron spectroscopy, Raman microscopy, atomic force microscopy and scanning tunneling microscopy. Appropriate adjustment of annealing parameters enables controllable growth of single-layer graphene islands and homogeneous, wafer-scale, single-layer graphene. The chemical state of the C 1s peak from X-ray photoelectron spectroscopy indicates there is almost no charge transfer between graphene and the Pd(1 1 1) substrate, suggesting weak graphene–substrate interaction. These findings show surface segregation to be an effective method for synthesizing large-scale graphene for fundamental research as well as potential applications. |
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