Iron-mediated growth of epitaxial graphene on SiC and diamond |
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| Authors: | SP Cooil F Song GT Williams OR Roberts DP Langstaff B Jørgensen K Høydalsvik DW Breiby E Wahlström DA Evans JW Wells |
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| Affiliation: | 1. Institute of Mathematics and Physics, Aberystwyth University, Aberystwyth SY23 3BZ, UK;2. Department of Physics, Norwegian University of Science and Technology (NTNU), Høgskoleringen 5, N-7491 Trondheim, Norway;3. Department of Physics, Aarhus University, DK-8000, Denmark;4. MAX IV Laboratory, Lund University, Sweden |
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| Abstract: | Ordered graphene films have been fabricated on Fe-treated SiC and diamond surfaces using the catalytic conversion of sp3 to sp2 carbon. In comparison with the bare SiC (0 0 0 1) surface, the graphitization temperature is reduced from over 1000 °C to 600 °C and for diamond (1 1 1), this new approach enables epitaxial graphene to be grown on this surface for the first time. For both substrates, a key development is the in situ monitoring of the entire fabrication process using real-time electron spectroscopy that provides the necessary precision for the production of films of controlled thickness. The quality of the graphene/graphite layers has been verified using angle-resolved photoelectron spectroscopy, scanning tunneling microscopy and low energy electron diffraction. Graphene is only formed on treated regions of the surface and so this offers a method for fabricating and patterning graphene structures on SiC and diamond in the solid-state at industrially realistic temperatures. |
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